Magnetoresistive Multilayers

Atomic Assembly of Magnetoresistive Multilayers

Atomic Assembly of Giant Magnetoresistive Multilayers

The emergence of metal multilayers that exhibit giant magnetoresistance (GMR) has led to new magnetic field sensors, and approaches for nonvolatile random access memories. Controlling the atomic scale structure across the many interfaces within these multilayers is central to improve the performance of these devices. However, the ability to manipulate atomic arrangements at this scale requires ...

Extraordinary Hall effect in Fe-Cr giant magnetoresistive multilayers

We show that for giant magnetoresistive Fe-Cr multilayer samples, the scaling law for the extraordinary Hall constant, RS;r n gives unrealistically large values of n(n52.8–3.3) if we use the resistivity r at an external field B50 as done by previous investigators. With B perpendicular to the film plane, the transverse magnetoresistance saturates at B'3 T in the 4.2–300 K temperature range. This...

Atomic Scale Structure of Giant Magnetoresistive Multilayers: Energetic Adatom and Surfactant Effects

–The deposition of higher quality giant magnetoresistive (GMR) metal multilayers is essential for improving the performance of magnetic field sensors and nonvolatile random access memories. Improved performance requires reduction of both the atomic scale interfacial roughness and interlayer mixing in the as deposited films. The first step is to develop relationships between controllable process...

Hand-Held Magnetoresistive Transducer

The initial design of a vertical magnetoresistive head in a hand-held wand for reading magnetically encoded price tags and credit cards is discussed. The performance of the head (e.g., resolution, signal shape and amplitude, and signal-to-noise ratio) is analytically and experimentally evaluated as a function of the configuration of the sensor, head-to-medium interface, and sensor processing an...